rfic的可调低压双向ESD保护

2011 IEEE Radio and Wireless Symposium Pub Date : 2011-03-07 DOI:10.1109/RWS.2011.5725504

Jian Liu, Lin Lin, Xin Wang, H Zhao, He Tang, Q. Fang, Albert Z. H. Wang, Liwu Yang, Haolu Xie, S. Fan, B. Zhao, Gary Zhang, Xingang Wang

{"title":"rfic的可调低压双向ESD保护","authors":"Jian Liu, Lin Lin, Xin Wang, H Zhao, He Tang, Q. Fang, Albert Z. H. Wang, Liwu Yang, Haolu Xie, S. Fan, B. Zhao, Gary Zhang, Xingang Wang","doi":"10.1109/RWS.2011.5725504","DOIUrl":null,"url":null,"abstract":"This paper reports a tunable low triggering voltage, dual-directional SCR ESD protection structure in CMOS for RF ICs. A new embedded gate-coupling technique is used to reduce and adjust its triggering voltage. Experiment shows a low discharging resistance of ∼0.26Ω, low leakage current of ∼0.19nA, low parasitic capacitance of ∼150fF and ultra fast response time of ∼100pS. This structure achieves ESD protection of >9.20kV HBM and >500V CDM for a 90µm device. A high ESD protection to Si ratio of ESDV∼8.17V/µm<sup>2</sup> is obtained for RF IC applications.","PeriodicalId":250672,"journal":{"name":"2011 IEEE Radio and Wireless Symposium","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Tunable low-voltage dual-directional ESD protection for RFICs\",\"authors\":\"Jian Liu, Lin Lin, Xin Wang, H Zhao, He Tang, Q. Fang, Albert Z. H. Wang, Liwu Yang, Haolu Xie, S. Fan, B. Zhao, Gary Zhang, Xingang Wang\",\"doi\":\"10.1109/RWS.2011.5725504\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports a tunable low triggering voltage, dual-directional SCR ESD protection structure in CMOS for RF ICs. A new embedded gate-coupling technique is used to reduce and adjust its triggering voltage. Experiment shows a low discharging resistance of ∼0.26Ω, low leakage current of ∼0.19nA, low parasitic capacitance of ∼150fF and ultra fast response time of ∼100pS. This structure achieves ESD protection of >9.20kV HBM and >500V CDM for a 90µm device. A high ESD protection to Si ratio of ESDV∼8.17V/µm<sup>2</sup> is obtained for RF IC applications.\",\"PeriodicalId\":250672,\"journal\":{\"name\":\"2011 IEEE Radio and Wireless Symposium\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE Radio and Wireless Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RWS.2011.5725504\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Radio and Wireless Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS.2011.5725504","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文报道了一种用于射频集成电路的CMOS可调低触发电压、双向可控硅ESD保护结构。采用一种新的嵌入式栅极耦合技术来降低和调节其触发电压。实验表明，放电电阻低~ 0.26Ω，漏电流低~ 0.19nA，寄生电容低~ 150fF，响应时间超快~ 100pS。该结构在90µm器件上实现了>9.20kV HBM和>500V CDM的ESD保护。对于射频集成电路应用，获得了ESDV ~ 8.17V/µm2的高ESD保护硅比。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Tunable low-voltage dual-directional ESD protection for RFICs

This paper reports a tunable low triggering voltage, dual-directional SCR ESD protection structure in CMOS for RF ICs. A new embedded gate-coupling technique is used to reduce and adjust its triggering voltage. Experiment shows a low discharging resistance of ∼0.26Ω, low leakage current of ∼0.19nA, low parasitic capacitance of ∼150fF and ultra fast response time of ∼100pS. This structure achieves ESD protection of >9.20kV HBM and >500V CDM for a 90µm device. A high ESD protection to Si ratio of ESDV∼8.17V/µm² is obtained for RF IC applications.

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2011 IEEE Radio and Wireless Symposium

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