{"title":"扩散和外延InAs光电二极管中的暗电流和噪声","authors":"Tkachuk Andriy, Tetyorkin Volodymyr, Sukach Andriy","doi":"10.1109/CAS52836.2021.9604182","DOIUrl":null,"url":null,"abstract":"A comparative analysis of the mechanisms of dark current and noise in InAs homo- and heterojunction photodiodes is carried out. It is shown that an excess current of a tunneling nature is the cause of the low-frequency 1/f noise at low temperatures. At high temperatures, the main source of noise is the generation-recombination current in the depleted area. Theoretical models of noise in infrared photodiodes are analyzed as applied to the experimental results obtained in this work.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dark Current and Noise in Diffused and Epitaxial InAs Photodiodes\",\"authors\":\"Tkachuk Andriy, Tetyorkin Volodymyr, Sukach Andriy\",\"doi\":\"10.1109/CAS52836.2021.9604182\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A comparative analysis of the mechanisms of dark current and noise in InAs homo- and heterojunction photodiodes is carried out. It is shown that an excess current of a tunneling nature is the cause of the low-frequency 1/f noise at low temperatures. At high temperatures, the main source of noise is the generation-recombination current in the depleted area. Theoretical models of noise in infrared photodiodes are analyzed as applied to the experimental results obtained in this work.\",\"PeriodicalId\":281480,\"journal\":{\"name\":\"2021 International Semiconductor Conference (CAS)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAS52836.2021.9604182\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAS52836.2021.9604182","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dark Current and Noise in Diffused and Epitaxial InAs Photodiodes
A comparative analysis of the mechanisms of dark current and noise in InAs homo- and heterojunction photodiodes is carried out. It is shown that an excess current of a tunneling nature is the cause of the low-frequency 1/f noise at low temperatures. At high temperatures, the main source of noise is the generation-recombination current in the depleted area. Theoretical models of noise in infrared photodiodes are analyzed as applied to the experimental results obtained in this work.
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