量产第7代1Tb四阶单元3D NAND快闪记忆体的制程改进

2023 IEEE International Memory Workshop (IMW) Pub Date : 2023-05-01 DOI:10.1109/IMW56887.2023.10145937

Soochan Chung, Dong-Hyeon Ko, Joonsung Lim, Kyung-Hee Kim, Sejie Takaki, Y. Seo, Byoungil Lee, Sejun Park, Jaeduk Lee, K. Noh, Sungjin Ahn, Sunghoi Hur

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引用次数: 1

摘要

在过去的几十年里，出现了对3D垂直NAND (V-NAND)闪存存储容量的更大需求。与现有的技术相比，四电平单元(QLC) NAND闪存可以完美地满足高密度和低成本非易失性存储器市场的需求。然而，尽管有这些好处，由于其较差的设备可靠性和较慢的性能，QLC的市场份额并没有显著增长。本文将介绍一种具有176字行(WL)和Cell-Over-Peripheral (COP)架构的新型高量产和高可靠性的1Tb QLC 3D NAND闪存，以及一些重要的工艺进步。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Process Improvements for 7th Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production

Over the past few decades, a greater need for 3D Vertical NAND (V-NAND) flash memory storage capacity has emerged. Compared to its prevailing technical predecessor, a quad-level cell (QLC) NAND flash memory can be a perfect replacement to meet the needs for the higher density and lower cost non-volatile memory market. However, despite these benefits, QLC’s market share has not been growing significantly because of its worse device reliability and slower performance. In this Paper, a new highly mass-producible and highly reliable 1Tb QLC 3D NAND flash memory with 176-word-line (WL) and Cell-Over-Peripheral (COP) architecture along with a number of significant process advancements will be presented.

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2023 IEEE International Memory Workshop (IMW)

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