内置可靠性,适用于双极/CMOS/DMOS技术

X. Gagnard, O. Bonnaud
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引用次数: 2

摘要

集成电路代工厂的永久目标是提高可靠性,以避免元件寿命期间的故障。理想情况下,这些部件应该在整个持续时间内在任务剖面条件下进行测试。特定的测试必须加速,以减少测量时间,而不产生新的退化,而且还要检测真正的缺陷或其根源。我们已经为前端开发了一种内置可靠性方法。晶圆级可靠性(WLR)是通过在过程中或过程结束时的电气或物理测试来建立的,以直接在其起源处消除缺陷。我们的研究主要涉及双极/CMOS/DMOS (BCD)技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Building-in reliability, application to bipolar/CMOS/DMOS technology
A permanent goal for an integrated circuit foundry is the improvement of reliability to avoid failures during component life. Ideally, the components should be tested in the mission profile conditions for the total duration. Specific tests must be accelerated to reduce the measurement time without creating new degradations, but also to detect the true defect or its origins. We have developed a building-in reliability approach for a front-end. The wafer level reliability (WLR) is set-up by electrical or physical tests during or at the end of the process, to eliminate defects directly at their origins. Our study concerned mainly a bipolar/CMOS/DMOS (BCD) technology.
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