三维耦合电热FinFET模拟,包括翅片形状对导热系数的依赖性

L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov
{"title":"三维耦合电热FinFET模拟,包括翅片形状对导热系数的依赖性","authors":"L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov","doi":"10.1109/SISPAD.2014.6931615","DOIUrl":null,"url":null,"abstract":"A thermal simulation module, based on the solution of the coupled Heat Flow, Poisson, and Current Continuity Equations, has been developed and implemented in the `atomistic' simulator GARAND to investigate the impact of self heating on FinFET DC operation. A progressive study of coupled electro-thermal simulation for FinFETs is presented. A new approximate formula for the reduced thermal conductivity due to phonon-boundary scattering in the fin is presented which considers both the fin height and the fin width, and is both position and temperature dependent. Simulation results for a SOI FinFET and a bulk FinFET example are compared and analysed.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity\",\"authors\":\"L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov\",\"doi\":\"10.1109/SISPAD.2014.6931615\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A thermal simulation module, based on the solution of the coupled Heat Flow, Poisson, and Current Continuity Equations, has been developed and implemented in the `atomistic' simulator GARAND to investigate the impact of self heating on FinFET DC operation. A progressive study of coupled electro-thermal simulation for FinFETs is presented. A new approximate formula for the reduced thermal conductivity due to phonon-boundary scattering in the fin is presented which considers both the fin height and the fin width, and is both position and temperature dependent. Simulation results for a SOI FinFET and a bulk FinFET example are compared and analysed.\",\"PeriodicalId\":101858,\"journal\":{\"name\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2014.6931615\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2014.6931615","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 23

摘要

基于热流、泊松和电流连续性方程的耦合解,在“原子”模拟器GARAND中开发并实现了热模拟模块,以研究自加热对FinFET直流工作的影响。本文提出了一种针对非场效应管的耦合电热模拟方法。提出了一个新的近似公式,该公式考虑了翅片高度和翅片宽度,并且与位置和温度有关。对SOI FinFET和本体FinFET的仿真结果进行了比较和分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity
A thermal simulation module, based on the solution of the coupled Heat Flow, Poisson, and Current Continuity Equations, has been developed and implemented in the `atomistic' simulator GARAND to investigate the impact of self heating on FinFET DC operation. A progressive study of coupled electro-thermal simulation for FinFETs is presented. A new approximate formula for the reduced thermal conductivity due to phonon-boundary scattering in the fin is presented which considers both the fin height and the fin width, and is both position and temperature dependent. Simulation results for a SOI FinFET and a bulk FinFET example are compared and analysed.
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