AIZTO/IZO双通道tft的光照效果

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI:10.1109/AM-FPD.2016.7543646

Hyun-Sik Choi, Jong-Heon Yang, J. Choi, Chi-Sun Hwang, S. Cho, S. Jeon

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引用次数: 0

摘要

在氧化薄膜晶体管(TFTs)中，由于其工作条件的关系，光照效果是一个很大的问题。光照可以改变氧化物tft的许多电学性质，如迁移率和阈值电压(Vth)。在许多研究中，氧空位被怀疑是光照射变化的主要原因。近年来报道了光照射下场致宏观势垒模型形成的背道。这也与氧空位有关。在这封信中，我们研究了DC和CV特性随双通道厚度的逐渐变化。为此，我们采用掺杂铝的铟锌锡氧化物(AIZTO)/铟锌氧化物(IZO)双通道tft。本文的主要目的是找出不同双通道厚度随光照变化的主要原因。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Light illumination effect in AIZTO/IZO dual-channel TFTs

In oxide thin-film transistors (TFTs), light illumination effect is a big concern due to its operating condition. Light illumination can change many electrical properties in oxide TFTs such as mobility and threshold voltage (Vth). In many researches, Oxygen vacancy is suspected as a main cause of the changes by light illumination. Recently, the back channel formation by field-induced macroscopic barrier model is reported under light illumination. This is also related to Oxygen vacancy. In this letter, we investigate the gradual changes in DC and CV characteristics depending on the dual-channel thicknesses. For this purpose, we use the aluminum-doped indium zinc tin oxide (AIZTO)/indium zinc oxide (IZO) dual-channel TFTs. The main goal of this paper is to find the main cause of the changes by light illumination in various dual-channel thicknesses.

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来源期刊

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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