E. Njoroge, J. T. Kabini, M. Mlambo, T. Ntsoane, T. Hlatshwayo, J. Malherbe
{"title":"单晶6H-SiC上Pd薄膜固相反应的研究","authors":"E. Njoroge, J. T. Kabini, M. Mlambo, T. Ntsoane, T. Hlatshwayo, J. Malherbe","doi":"10.1109/OI.2018.8535764","DOIUrl":null,"url":null,"abstract":"The solid state reactions between Pd films deposited by resistive evaporation on 6H-SiC substrates have been investigated by Rutherford backscattering spectrometry (RBS) scanning electron microscopy (SEM), Raman spectroscopy and glancing-incidence xray diffraction (GIXRD). The deposited films were subsequently annealed from 200 to 800°C in vacuum. At room temperature, no silicides were detected to have formed at the Pd/SiC interface. The as-deposited Pd films formed a flat and chemically inert interface with SiC. After annealing at 400°C, a reaction zone was formed between Pd and 6H-SiC. The initial phase to form in the Pd-SiC samples were Pd4Si and Pd3Si. After annealing the Pd/SiC samples at 600°C, the contact structure consists of unreacted Pd, Pd3Si and carbon. During annealing at 700°C and 800 °C, Pd film had completely reacted with SiC resulting in a reaction zone consisting of Pd2Si and C in a graphite state. Raman analysis of the Pd-SiC samples annealed in a vacuum at 700 and 800 °C showed clear D and G carbon peaks which was evidence of formation of graphite at the surface of the Pd/SiC samples.","PeriodicalId":331140,"journal":{"name":"2018 Open Innovations Conference (OI)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Investigation of Solid State Reactions of Pd Films on Single-Crystal 6H-SiC\",\"authors\":\"E. Njoroge, J. T. Kabini, M. Mlambo, T. Ntsoane, T. Hlatshwayo, J. Malherbe\",\"doi\":\"10.1109/OI.2018.8535764\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The solid state reactions between Pd films deposited by resistive evaporation on 6H-SiC substrates have been investigated by Rutherford backscattering spectrometry (RBS) scanning electron microscopy (SEM), Raman spectroscopy and glancing-incidence xray diffraction (GIXRD). The deposited films were subsequently annealed from 200 to 800°C in vacuum. At room temperature, no silicides were detected to have formed at the Pd/SiC interface. The as-deposited Pd films formed a flat and chemically inert interface with SiC. After annealing at 400°C, a reaction zone was formed between Pd and 6H-SiC. The initial phase to form in the Pd-SiC samples were Pd4Si and Pd3Si. After annealing the Pd/SiC samples at 600°C, the contact structure consists of unreacted Pd, Pd3Si and carbon. During annealing at 700°C and 800 °C, Pd film had completely reacted with SiC resulting in a reaction zone consisting of Pd2Si and C in a graphite state. Raman analysis of the Pd-SiC samples annealed in a vacuum at 700 and 800 °C showed clear D and G carbon peaks which was evidence of formation of graphite at the surface of the Pd/SiC samples.\",\"PeriodicalId\":331140,\"journal\":{\"name\":\"2018 Open Innovations Conference (OI)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 Open Innovations Conference (OI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OI.2018.8535764\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Open Innovations Conference (OI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OI.2018.8535764","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of Solid State Reactions of Pd Films on Single-Crystal 6H-SiC
The solid state reactions between Pd films deposited by resistive evaporation on 6H-SiC substrates have been investigated by Rutherford backscattering spectrometry (RBS) scanning electron microscopy (SEM), Raman spectroscopy and glancing-incidence xray diffraction (GIXRD). The deposited films were subsequently annealed from 200 to 800°C in vacuum. At room temperature, no silicides were detected to have formed at the Pd/SiC interface. The as-deposited Pd films formed a flat and chemically inert interface with SiC. After annealing at 400°C, a reaction zone was formed between Pd and 6H-SiC. The initial phase to form in the Pd-SiC samples were Pd4Si and Pd3Si. After annealing the Pd/SiC samples at 600°C, the contact structure consists of unreacted Pd, Pd3Si and carbon. During annealing at 700°C and 800 °C, Pd film had completely reacted with SiC resulting in a reaction zone consisting of Pd2Si and C in a graphite state. Raman analysis of the Pd-SiC samples annealed in a vacuum at 700 and 800 °C showed clear D and G carbon peaks which was evidence of formation of graphite at the surface of the Pd/SiC samples.