集成压电- mems能量收集电源管理系统的高效CMOS整流器设计

Martin Nielsen-Lönn, P. Harikumar, J. Wikner, A. Alvandpour
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引用次数: 4

摘要

基于mems的压电能量采集器是未来自供电医疗植入设备、低功耗无线传感器和其他广泛新兴超低功耗应用的有前途的能源。然而,小尺寸和低振动频率会导致采集器输出功率非常低(μW范围内)。这使得集成CMOS整流器的设计成为一个挑战,最终限制了整个电源管理系统的整体功率效率。这项工作研究了两种不同的全集成整流器拓扑结构,即倍压器和全桥。这两款整流器采用0.35 μm、0.18 μm和65纳米CMOS技术,采用有源二极管和交叉耦合对设计。然后根据其功率效率和电压效率对这些超低功耗应用中的典型压电换能器进行评估和比较,其产生的电压在0.27-1.2 V之间。此外,根据电路仿真结果验证了整流器的解析表达式,以便更好地理解其局限性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of efficient CMOS rectifiers for integrated piezo-MEMS energy-harvesting power management systems
MEMS-based piezoelectric energy harvesters are promising energy sources for future self-powered medical implant devices, low-power wireless sensors, and a wide range of other emerging ultra-low-power applications. However, the small form factors and the low vibration frequencies can lead to very low (in μW range) harvester output power. This makes the design of integrated CMOS rectifiers a challenge, ultimately limiting the overall power efficiency of the entire power management system. This work investigates two different fully integrated rectifier topologies, i.e. voltage doublers and full bridges. Implemented in 0.35-μm, 0.18-μm, and 65-nm CMOS technologies, the two rectifier architectures are designed using active diodes and cross-coupled pairs. These are then evaluated and compared in terms of their power efficiency and voltage efficiency for typical piezoelectric transducers in such ultra-low-power applications which generate voltages between 0.27-1.2 V. Furthermore, analytical expressions for the rectifiers are verified against circuit simulation results, allowing a better understanding of their limitations.
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