L到X波段宽带GaN-MMIC功率放大器

2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI:10.1109/EMICC.2007.4412669

C. Meliani, R. Behtash, J. Wiirfl, W. Heinrich, G. Trankle

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引用次数: 13

摘要

提出了一种覆盖L到X波段的宽带GaN单片功率放大器，用于测量装置和多波段系统的各种应用。它基于8个晶体管单元，每个单元具有4倍50毫米栅极宽度，遵循分布式放大器概念。该放大器实现10db宽带小信号增益和3db截止频率为11ghz。该电路在2ghz到10ghz的带宽范围内提供1.4到2.2 W的功率。在最大输出功率下，PAE大于20%。

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A Broadband GaN-MMIC power amplifier for L to X Bands

A broadband GaN monolithic power amplifier covering the L to X bands is presented as is required for various applications in measurement set-ups and multi-band systems. It is based on 8 transistor cells with 4 times 50 mm gate width each following the distributed amplifier concept. The amplifier achieves 10 dB broadband small-signal gain and a 3 dB cut-off frequency of 11 GHz. The circuit delivers between 1.4 and 2.2 W over the bandwidth from 2 GHz up to 10 GHz. At the maximum output power a PAE higher than 20% is achieved.

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2007 European Microwave Integrated Circuit Conference

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