发射极关断晶闸管(ETO)无缓冲器工作分析

Yuxin Li, A. Huang, K. Motto
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引用次数: 34

摘要

发射极关断晶闸管(ETO)是一种在统一关断增益条件下关断GTO的GTO- mosfet混合功率半导体器件。分析了电致通无压关断失效机理,提出了将电致通无压关断能力扩展到器件理论极限的解决方案。给出了理论分析和实验结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of the snubberless operation of the emitter turn-off thyristor (ETO)
The emitter turn-off thyristor (ETO) is a GTO-MOSFET hybrid power semiconductor device that turns off the GTO under the unity turn-off gain condition. This paper analyzes the failure mechanism in the snubberless turn-off of the ETO and proposes solutions that extend the snubberless switching capability to the theoretical limitation of the device. Theoretical analysis and experimental results are presented.
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