反应磁控溅射在CIS/CIGS光电器件上高速率沉积透明和导电氧化锌薄膜

T. Gillespie, W.A. Miles, J. A. del Cueto
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引用次数: 2

摘要

与陶瓷靶材的射频溅射相比,金属靶材的反应溅射ZnO具有更高的沉积速率和更低的靶材成本的双重优点。采用直流反应溅射的方法,在锌铝合金靶材上制备了高沉积速率的导电掺铝氧化锌(ZnO:Al)薄膜材料。通过阴极电压控制对材料性能进行可靠的过程控制。研究了金属靶直流反应溅射法制备ZnO:Al薄膜的工艺控制和材料性能。这些材料被加入到二硒化铜铟(CIS)光伏器件中,并产生了超过10%的AM1.5效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reactive magnetron sputtering of transparent and conductive zinc oxide films deposited at high rates onto CIS/CIGS photovoltaic devices
Reactively sputtered ZnO from metal targets enjoys dual advantages of higher deposition rates and lower target costs than RF sputtering from ceramic targets. High deposition rate and conductive, aluminum-doped zinc oxide (ZnO:Al) thin-film materials have been fabricated by DC-powered reactive sputtering from a zinc-aluminum metal alloy target. Reliable process control of material properties is exercised by cathode voltage control. Data is presented on the process control and materials properties of the ZnO:Al thin films produced by DC reactive sputtering from metal targets. These materials were incorporated in copper indium diselenide (CIS) photovoltaic devices, and have resulted in AM1.5 efficiencies over 10%.
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