{"title":"利用经验陷阱模型分析具有场极板的GaN hemt的背门效应","authors":"Ankur Prasad, M. Thorsell, H. Zirath, C. Fager","doi":"10.1109/imarc49196.2021.9714650","DOIUrl":null,"url":null,"abstract":"This paper investigates the influence of field-plates on the trapping effects in GaN HEMTs. Conclusions are drawn from the comparison of the extracted parameters of a Shockley- Read-Hall theory-based empirical trap model for devices with and without field-plates. The model separates the influence of the trap potential and the modulation of the drain-source current due to the trapped electrons. Lower trap potential is observed in the presence of a field-plate due to a lower number of trapped electrons. On the other hand, the trapped charges have a larger influence on the current in the field-plated devices. The extracted parameters, therefore, show a trade-off between reduced trap potential and increased influence on the current in the device with the added field-plate.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analyzing The Back-Gating Effect in GaN HEMTs with Field-Plates Using an Empirical Trap Model\",\"authors\":\"Ankur Prasad, M. Thorsell, H. Zirath, C. Fager\",\"doi\":\"10.1109/imarc49196.2021.9714650\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper investigates the influence of field-plates on the trapping effects in GaN HEMTs. Conclusions are drawn from the comparison of the extracted parameters of a Shockley- Read-Hall theory-based empirical trap model for devices with and without field-plates. The model separates the influence of the trap potential and the modulation of the drain-source current due to the trapped electrons. Lower trap potential is observed in the presence of a field-plate due to a lower number of trapped electrons. On the other hand, the trapped charges have a larger influence on the current in the field-plated devices. The extracted parameters, therefore, show a trade-off between reduced trap potential and increased influence on the current in the device with the added field-plate.\",\"PeriodicalId\":226787,\"journal\":{\"name\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/imarc49196.2021.9714650\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/imarc49196.2021.9714650","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analyzing The Back-Gating Effect in GaN HEMTs with Field-Plates Using an Empirical Trap Model
This paper investigates the influence of field-plates on the trapping effects in GaN HEMTs. Conclusions are drawn from the comparison of the extracted parameters of a Shockley- Read-Hall theory-based empirical trap model for devices with and without field-plates. The model separates the influence of the trap potential and the modulation of the drain-source current due to the trapped electrons. Lower trap potential is observed in the presence of a field-plate due to a lower number of trapped electrons. On the other hand, the trapped charges have a larger influence on the current in the field-plated devices. The extracted parameters, therefore, show a trade-off between reduced trap potential and increased influence on the current in the device with the added field-plate.