基于100V-GaN集成电路技术的全集成脉冲激光雷达驱动器分析与设计

2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME) Pub Date : 2022-06-12 DOI:10.1109/prime55000.2022.9816827

A. Bettini, T. Cosnier, A. Magnani, O. Syshchyk, M. Borga, S. Decoutere, A. Neviani

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引用次数: 1

摘要

介绍了一种基于GaN-on-SOI技术的ToF激光雷达集成40A脉冲驱动器的设计。所产生的激光电流由谐振电路产生，上升时间可达亚纳秒。该设计旨在最佳地利用GaN技术，减轻源弹跳效应并补偿互补器件的缺乏，同时保持可靠性。集成过程通过晶圆级芯片规模封装(WLCSP)最大限度地减少寄生，提高驱动器的性能。

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Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology

The design of an integrated 40A pulsed driver for ToF LiDAR in GaN-on-SOI technology is presented. The produced laser current, generated by a resonant circuit, can achieve sub-nanosecond rise time. The design aims to optimally exploit GaN technology, mitigating source bounce effects and compensating the lack of complementary devices, while preserving reliability. The integration process minimizes parasitics via wafer-level-chip-scale packaging (WLCSP), enhancing the performance of the driver.

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来源期刊

2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)

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