{"title":"用于射频前端收发器tx泄漏抑制的新型UMTS多频带设计","authors":"A. Wahba, Y. Khalaf, F. Farag","doi":"10.1109/ICM.2014.7071838","DOIUrl":null,"url":null,"abstract":"A new design for active filtering technique, used to remove the transmitted leakage signal in frequency division duplex (FDD) RF front-end transceivers, is presented. In this technique, the front-end SAW filter is replaced by an active on-chip bandpass filter. The proposed design covers all the UMTS bands as it can be controlled by switches to select the desired band of operation. The filtering technique is based on using a bandpass sink filter to selectively filter the transmitted leakage before the downconversion mixer, while not affecting the desired signal gain. The proposed circuit achieves (57 dB to 62 dB) of signal-to-leakage ratio for different UMTS bands. Designed in 0.13μm CMOS process, the proposed technique improve the IIP2 by 7 dB. However, the noise figure (NF) is degraded by 1.5 dB. The sink filter draws 4.8 mA current from 1.6 V supply.","PeriodicalId":107354,"journal":{"name":"2014 26th International Conference on Microelectronics (ICM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"New UMTS multiband design for TX-leakage suppression in RF front-end transcievers\",\"authors\":\"A. Wahba, Y. Khalaf, F. Farag\",\"doi\":\"10.1109/ICM.2014.7071838\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new design for active filtering technique, used to remove the transmitted leakage signal in frequency division duplex (FDD) RF front-end transceivers, is presented. In this technique, the front-end SAW filter is replaced by an active on-chip bandpass filter. The proposed design covers all the UMTS bands as it can be controlled by switches to select the desired band of operation. The filtering technique is based on using a bandpass sink filter to selectively filter the transmitted leakage before the downconversion mixer, while not affecting the desired signal gain. The proposed circuit achieves (57 dB to 62 dB) of signal-to-leakage ratio for different UMTS bands. Designed in 0.13μm CMOS process, the proposed technique improve the IIP2 by 7 dB. However, the noise figure (NF) is degraded by 1.5 dB. The sink filter draws 4.8 mA current from 1.6 V supply.\",\"PeriodicalId\":107354,\"journal\":{\"name\":\"2014 26th International Conference on Microelectronics (ICM)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 26th International Conference on Microelectronics (ICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2014.7071838\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 26th International Conference on Microelectronics (ICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2014.7071838","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
提出了一种新的有源滤波技术,用于去除频分双工(FDD)射频前端收发器中传输的泄漏信号。在这种技术中,前端SAW滤波器被一个有源片上带通滤波器取代。所提出的设计涵盖了所有UMTS频段,因为它可以通过开关控制以选择所需的操作频段。该滤波技术是基于使用带通汇聚滤波器在下变频混频器之前选择性地滤波传输泄漏,同时不影响期望的信号增益。该电路在不同的UMTS频段实现了(57 dB ~ 62 dB)的信漏比。采用0.13μm CMOS工艺设计,IIP2提高了7 dB。但是,噪声系数(NF)降低了1.5 dB。sink滤波器从1.6 V电源中提取4.8 mA电流。
New UMTS multiband design for TX-leakage suppression in RF front-end transcievers
A new design for active filtering technique, used to remove the transmitted leakage signal in frequency division duplex (FDD) RF front-end transceivers, is presented. In this technique, the front-end SAW filter is replaced by an active on-chip bandpass filter. The proposed design covers all the UMTS bands as it can be controlled by switches to select the desired band of operation. The filtering technique is based on using a bandpass sink filter to selectively filter the transmitted leakage before the downconversion mixer, while not affecting the desired signal gain. The proposed circuit achieves (57 dB to 62 dB) of signal-to-leakage ratio for different UMTS bands. Designed in 0.13μm CMOS process, the proposed technique improve the IIP2 by 7 dB. However, the noise figure (NF) is degraded by 1.5 dB. The sink filter draws 4.8 mA current from 1.6 V supply.