J. Nakata, T. Sogo, K. Yamanaka, Y. Mihashi, K. Shirahata
{"title":"温度敏感开关装置","authors":"J. Nakata, T. Sogo, K. Yamanaka, Y. Mihashi, K. Shirahata","doi":"10.1109/IEDM.1977.189294","DOIUrl":null,"url":null,"abstract":"A p-n-p-n temperature-sensitive switching device \"Thermosenstor\" operatable in the temperature range of -30°C to 150°C has been developed by implanting argon ion to the collector junction of the p-n-p-n structure. Argon ion implantation also permits the device to be less sensitive to the dV/dt triggering as well as to eliminate the on-off switching temperature differential. The construction, characteristics and reliability are described.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"62 10","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature-sensitive switching device thermosenstor\",\"authors\":\"J. Nakata, T. Sogo, K. Yamanaka, Y. Mihashi, K. Shirahata\",\"doi\":\"10.1109/IEDM.1977.189294\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A p-n-p-n temperature-sensitive switching device \\\"Thermosenstor\\\" operatable in the temperature range of -30°C to 150°C has been developed by implanting argon ion to the collector junction of the p-n-p-n structure. Argon ion implantation also permits the device to be less sensitive to the dV/dt triggering as well as to eliminate the on-off switching temperature differential. The construction, characteristics and reliability are described.\",\"PeriodicalId\":218912,\"journal\":{\"name\":\"1977 International Electron Devices Meeting\",\"volume\":\"62 10\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1977.189294\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189294","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A p-n-p-n temperature-sensitive switching device "Thermosenstor" operatable in the temperature range of -30°C to 150°C has been developed by implanting argon ion to the collector junction of the p-n-p-n structure. Argon ion implantation also permits the device to be less sensitive to the dV/dt triggering as well as to eliminate the on-off switching temperature differential. The construction, characteristics and reliability are described.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
