Performance limits of MEMS switches for power electronics

Advances in semiconductor technology have brought the performance of power transistors near the physical limit. Substantial performance enhancement of power switches will therefore require either new materials, or new devices that obey fundamentally different limits. One of the new power devices that might offer an alternative to the transistor is the microelectromechanical (MEMS) switch. Here we analyze the potential of metal-contact MEMS switches for power electronics by exploring their physical performance limits and by benchmarking them against transistors. Based on a semi-empirical model we show that MEMS switches could outperform Si transistors for actuation voltages Vact>;30 V and could even beat GaN for Vact>;1000 V. Therefore we conclude that MEMS switch technology potentially offers an interesting alternative route towards high performance power devices, although switching time and safe operating area remain points of concern.