降低GaAs mesfet中衬底诱导的栅极滞后

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722639

Jianwen Bao, R. Leoni, Xiaohang Du, J.C.M. Hwang, D. M. Shah, J. R. Jones, M. Shokrani

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引用次数: 1

摘要

详细研究了抑制离子注入GaAs mesfet中衬底陷阱引起的栅极滞后的方法。研究发现，这些方法通常涉及空穴的供应，这些空穴可以与捕获的电子结合，而捕获的电子是栅极滞后的罪魁祸首。对于采用高漏极电压的大功率放大器，可以通过冲击电离提供孔。对于采用低漏极电压的电池供电放大器，可以通过触点向埋设的p层提供孔。

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Reduction of substrate-induced gate lag in GaAs MESFETs

Methods to suppress substrate trap-induced gate lag in ion-implanted GaAs MESFETs have been investigated in detail. It was found that the methods generally involve a supply of holes which can combine with the trapped electrons which are the culprits of gate lag. For high-power amplifiers employing high drain voltages, holes can be supplied through impact ionization. For battery-operated amplifiers employing low drain voltages, holes can be supplied through a contact to the buried p-layer.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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