S. King, J. Plombon, J. Bielefeld, J. Blackwell, S. Vyas, R. Chebiam, C. Naylor, D. Michalak, M. Kobrinsky, F. Gstrein, M. Metz, J. Clarke, R. Thapa, M. Paquette, V. Vemuri, N. Strandwitz, Y. Fan, M. Orlowski
{"title":"CMOS纳米电子学中介电材料的高与低的选择性多彩而寒冷的视角","authors":"S. King, J. Plombon, J. Bielefeld, J. Blackwell, S. Vyas, R. Chebiam, C. Naylor, D. Michalak, M. Kobrinsky, F. Gstrein, M. Metz, J. Clarke, R. Thapa, M. Paquette, V. Vemuri, N. Strandwitz, Y. Fan, M. Orlowski","doi":"10.1109/IEDM13553.2020.9371942","DOIUrl":null,"url":null,"abstract":"The remarkable advancement of CMOS electronics over the past two decades has been greatly aided by innovations allowing dielectric scaling across both ends of the permittivity spectrum. This paper describes how new dielectric innovations beyond permittivity scaling will allow both the extension of Moore’s law for another decade and usher in an array of new devices and computational paradigms.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Selectively Colorful yet Chilly Perspective on the Highs and Lows of Dielectric Materials for CMOS Nanoelectronics\",\"authors\":\"S. King, J. Plombon, J. Bielefeld, J. Blackwell, S. Vyas, R. Chebiam, C. Naylor, D. Michalak, M. Kobrinsky, F. Gstrein, M. Metz, J. Clarke, R. Thapa, M. Paquette, V. Vemuri, N. Strandwitz, Y. Fan, M. Orlowski\",\"doi\":\"10.1109/IEDM13553.2020.9371942\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The remarkable advancement of CMOS electronics over the past two decades has been greatly aided by innovations allowing dielectric scaling across both ends of the permittivity spectrum. This paper describes how new dielectric innovations beyond permittivity scaling will allow both the extension of Moore’s law for another decade and usher in an array of new devices and computational paradigms.\",\"PeriodicalId\":415186,\"journal\":{\"name\":\"2020 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM13553.2020.9371942\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM13553.2020.9371942","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Selectively Colorful yet Chilly Perspective on the Highs and Lows of Dielectric Materials for CMOS Nanoelectronics
The remarkable advancement of CMOS electronics over the past two decades has been greatly aided by innovations allowing dielectric scaling across both ends of the permittivity spectrum. This paper describes how new dielectric innovations beyond permittivity scaling will allow both the extension of Moore’s law for another decade and usher in an array of new devices and computational paradigms.