K. Sukegawa, H. Matsuoka, T. Sasaki, K. Park, S. Kawamura, M. Nakano
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引用次数: 0
摘要
通常在SOS (silicon on sapphire)薄膜中，Si缺陷(如孪晶和层错)的密度相当高，特别是在Si/蓝宝石界面附近，主要是由于Si和蓝宝石之间的晶格不匹配。这导致电性能较差相比，他们的散装同行。虽然有报道称脉冲激光照射可以改善SOS器件的特性，但尚未对激光照射SOS薄膜的质量进行详细研究。结果表明，通过CW-Ar激光再结晶，SOS薄膜的质量得到了显著改善，SOS薄膜几乎没有缺陷。无缺陷的SOS薄膜减少了n-和p- mosfet的背道泄漏电流，同时将载流子迁移率提高了30-50%。
Significant improvement in characteristics of SOS/MOSFETs by CW-Ar laser-recrystallization
Generally in SOS (silicon on sapphire) films, the density of Si defects such as twins and stacking faults is quite high, especially near the Si/sapphire interface, mainly due to the lattice mismatch between Si and sapphire. This leads to inferior electrical properties compared to their bulk counterparts. Although it has been reported that the characteristics of SOS devices can be improved by a pulse laser irradiation, the quality of laser-irradiated SOS films has not been investigated in detail. It is demonstrated that the SOS films have been significantly improved by CW-Ar laser recrystallization, resulting in almost defect-free SOS films. The defect-free SOS films reduce back-channel leakage currents in both n- and p-MOSFETs, while at the same time improving carrier mobilities by 30-50%.<>
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