C注入对NiSi/Si触点电学性能的影响

Extended Abstracts of the Fifth International Workshop on Junction Technology Pub Date : 2005-06-07 DOI:10.1109/IWJT.2005.203892

O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, S. Zaima

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引用次数: 1

摘要

研究了C注入对NiSi/Si触点电学性能的影响。C注入可防止NiSi团聚，有效抑制了NiSi片阻的增加。在NiSi/p/sup +/-Si系统中，由于B在NiSi/Si界面堆积，C进入Si也降低了接触电阻。C注入有望为NiSi/Si系统提供高热鲁棒性和低电阻，用于未来的Si器件。

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Impact of C implantation on electrical properties of NiSi/Si contact

We investigated the influence of C implantation on electrical properties of NiSi/Si contact. Increase in sheet resistance of NiSi is effectively suppressed due to preventing the agglomeration of NiSi with C implantation. C into Si also reduces contact resistance in NiSi/p/sup +/-Si system with pile-up of B at the NiSi/Si interface. C implantation promises the high thermal robustness of NiSi and the low resistance in NiSi/Si system for future Si devices.

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Extended Abstracts of the Fifth International Workshop on Junction Technology

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