基于2点1电子QCA的新型并行存储器设计

Mili Ghosh, Debarka Mukhopadhyay, P. Dutta
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引用次数: 12

摘要

鉴于CMOS技术的技术局限性,一个严肃的研究倡议是明显的纳米技术,作为现有技术的替代品。量子点元胞自动机是纳米技术领域的一个重要研究领域。在本文中,我们处理的是2点1电子QCA。本文提出了一种基于2点1电子QCA的单比特和多比特并行存储器设计方法。所提出的设计将保持稳定性措施,并期望是最优的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel parallel memory design using 2 Dot 1 electron QCA
In view of the technical limitations of CMOS technology, a serious research initiative is evident towards nanotechnology, as a substitution of the existing technology. Quantum-Dot Cellular Automata constitutes a major field of research in the nanotechnology domain. In this article we are dealing with 2 Dot 1 Electron QCA. This paper proposes a novel parallel memory design both single bit and multi-bit using 2 Dot 1 Electron QCA. The proposed design is going to preserve the stability measure and expected to be optimal.
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