串联太阳能电池用GaAsP/Si外延横向过度生长

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/CSW55288.2022.9930409

A. Strömberg, B. Manavaimaran, L. Srinivasan, S. Lourdudoss, Y. Sun

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引用次数: 0

摘要

采用高性价比的异质外延技术制备高晶体质量的GaAsP/Si，有望实现效率高于30%的低成本硅基串联太阳能电池。本文研究了氢化物气相外延(HVPE)对GaAsP/GaAs和GaAsP/GaAs/Si的外延横向过生长(ELOG)及其特性。获得了高晶体质量的ELOG GaAsP/Si，其PL强度增强，线宽窄，表明ELOG方法降低了缺陷密度。

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Epitaxial lateral overgrowth of GaAsP/Si for tandem solar cell

High crystal quality GaAsP/Si fabricated by cost effective heteroepitaxial technology is promising to realize low-cost Si based tandem solar cell with efficiency higher than 30%. In this work, epitaxial lateral overgrowth (ELOG) of GaAsP/GaAs and GaAsP/GaAs/Si by hydride vapor phase epitaxy (HVPE) and their properties are studied by photoluminescence (PL) mapping. High crystal quality ELOG GaAsP/Si is obtained with enhanced PL intensity and narrow line width indicating reduced defect density provided by ELOG approach.

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2022 Compound Semiconductor Week (CSW)

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