自由基氧化提高超薄栅极氧化物可靠性的优势

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852815

Yuji Saito, K. Sekine, '. NaokiUeda, M. Hirayama, S. Sugawa, T. Ohmi

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引用次数: 20

摘要

本文重点介绍了微波激发高密度Kr/O/sub - 2/等离子体氧化氧自由基的优点，以改善传统的H/sub - 2/O和/或O/sub - 2/分子热氧化工艺的缺点。结果表明，与传统的热氧化工艺相比，Kr/O/sub 2/等离子体氧化工艺不仅可以改善[100]表面和[111]表面氧化硅的浅沟隔离厚度变化和完整性。

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Advantage of radical oxidation for improving reliability of ultra-thin gate oxide

This paper focuses attention on the advantage of oxygen radical oxidation by a microwave-excited high-density Kr/O/sub 2/ plasma for improving the disadvantages of conventional thermal oxidation processes using H/sub 2/O and/or O/sub 2/ molecules, and demonstrates that the Kr/O/sub 2/ plasma oxidation process can improve the thickness variation on shallow-trench isolation and integrity of silicon oxide not only on the [100] surface but also on the [111] surface compared to those of conventional thermal oxidation processes.

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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