{"title":"一种紧凑的宽带SMA连接器到空基板集成波导(ESIW)的过渡","authors":"Arani Ali Khan, M. Mandal, Ravi Shaw","doi":"10.1109/IMARC.2015.7411379","DOIUrl":null,"url":null,"abstract":"In this paper, a novel excitation technique by a commercially available SMA connector is presented for the empty substrate integrated waveguide (ESIW). The SMA connector is directly connected to one end of the ESIW. A prototype back-to-back transition is designed and fabricated for X-band operation. Measurement results show that the insertion loss of the back-to-back transition is below 1 dB over 7.15 GHz to 12.5 GHz. Losses from the transition are studied in details. The transition has a compact dimension of 22 mm × 3.5 mm.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A compact and wideband SMA connector to empty substrate integrated waveguide (ESIW) transition\",\"authors\":\"Arani Ali Khan, M. Mandal, Ravi Shaw\",\"doi\":\"10.1109/IMARC.2015.7411379\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a novel excitation technique by a commercially available SMA connector is presented for the empty substrate integrated waveguide (ESIW). The SMA connector is directly connected to one end of the ESIW. A prototype back-to-back transition is designed and fabricated for X-band operation. Measurement results show that the insertion loss of the back-to-back transition is below 1 dB over 7.15 GHz to 12.5 GHz. Losses from the transition are studied in details. The transition has a compact dimension of 22 mm × 3.5 mm.\",\"PeriodicalId\":307742,\"journal\":{\"name\":\"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMARC.2015.7411379\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMARC.2015.7411379","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A compact and wideband SMA connector to empty substrate integrated waveguide (ESIW) transition
In this paper, a novel excitation technique by a commercially available SMA connector is presented for the empty substrate integrated waveguide (ESIW). The SMA connector is directly connected to one end of the ESIW. A prototype back-to-back transition is designed and fabricated for X-band operation. Measurement results show that the insertion loss of the back-to-back transition is below 1 dB over 7.15 GHz to 12.5 GHz. Losses from the transition are studied in details. The transition has a compact dimension of 22 mm × 3.5 mm.
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