ZnS作为牺牲层在PECVD SiN/ subx /自支撑结构中的应用

K. Winchester, S.M.R. Spaargaren, J. Dell
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引用次数: 9

摘要

构建独立的微结构需要使用牺牲的蚀刻层。虽然SiO/ sub2 /通常被用作LPCVD氮化硅结构的牺牲层,但我们发现它与PECVD氮化硅的自支撑薄膜不相容。具体来说,当制备这种自支撑膜时,膜对SiO/ sub2 /蚀刻的选择性太低。这个问题导致膜结构在从牺牲层释放器件所需的长蚀刻时间内被显著蚀刻。结果表明,以ZnS作为牺牲层,可以制备出PECVD氮化硅自支撑薄膜结构。该工艺允许MEMs结构与不兼容高温加工的半导体集成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The use of ZnS as a sacrificial layer in the construction of PECVD SiN/sub x/ self-supporting structures
The construction of freestanding microstructures requires the use of a sacrificial etch layer. Whilst SiO/sub 2/ is commonly employed as a sacrificial layer for LPCVD silicon nitride structures, we have found that it is incompatible with thin self-supporting membranes of PECVD silicon nitride. Specifically, when fabricating such self-supporting membranes the selectivity of the membrane to the SiO/sub 2/ etch is too low. This problem causes the membrane structure to be etched significantly during the long etch times required to release a device from the sacrificial layer. It is shown that by using ZnS as a sacrificial layer, thin self-supporting membrane microstructures formed from PECVD silicon nitride can be accomplished. This process allows integration of MEMs structures with semiconductors that are incompatible with high temperature processing.
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