非易失性存储器的演变和革命

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409666

P. Cappelletti

{"title":"非易失性存储器的演变和革命","authors":"P. Cappelletti","doi":"10.1109/IEDM.2015.7409666","DOIUrl":null,"url":null,"abstract":"For over 40 years, the evolution of Non Volatile Memories has been mostly based on the floating gate MOS transistor. We have successfully succeeded in scaling this wonderful device below 20nm but we are now approaching the limit. It is time for disruptive innovations, either integrating the same basic device in a vertical structure or moving to totally different device concepts. This paper analyzes the different alternatives in relation to their areas of application.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"71","resultStr":"{\"title\":\"Non volatile memory evolution and revolution\",\"authors\":\"P. Cappelletti\",\"doi\":\"10.1109/IEDM.2015.7409666\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For over 40 years, the evolution of Non Volatile Memories has been mostly based on the floating gate MOS transistor. We have successfully succeeded in scaling this wonderful device below 20nm but we are now approaching the limit. It is time for disruptive innovations, either integrating the same basic device in a vertical structure or moving to totally different device concepts. This paper analyzes the different alternatives in relation to their areas of application.\",\"PeriodicalId\":336637,\"journal\":{\"name\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"71\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2015.7409666\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409666","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 71

摘要

40多年来，非易失性存储器的发展主要是基于浮栅MOS晶体管。我们已经成功地将这个奇妙的装置缩小到20nm以下，但我们现在正在接近极限。现在是颠覆性创新的时候了，要么将相同的基本设备整合到垂直结构中，要么转向完全不同的设备概念。本文根据不同的应用领域分析了不同的替代方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Non volatile memory evolution and revolution

For over 40 years, the evolution of Non Volatile Memories has been mostly based on the floating gate MOS transistor. We have successfully succeeded in scaling this wonderful device below 20nm but we are now approaching the limit. It is time for disruptive innovations, either integrating the same basic device in a vertical structure or moving to totally different device concepts. This paper analyzes the different alternatives in relation to their areas of application.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 IEEE International Electron Devices Meeting (IEDM)

自引率

0.00%

发文量