离子注入统计对mosfet中V/sub T/波动的影响:十硼烷和硼通道植入的比较

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852799

H. Tuinhout, F. Widdershoven, P. Stolk, J. Schmitz, B. Dirks, K. van der Tak, P. Bancken, J. Politiek

{"title":"离子注入统计对mosfet中V/sub T/波动的影响:十硼烷和硼通道植入的比较","authors":"H. Tuinhout, F. Widdershoven, P. Stolk, J. Schmitz, B. Dirks, K. van der Tak, P. Bancken, J. Politiek","doi":"10.1109/VLSIT.2000.852799","DOIUrl":null,"url":null,"abstract":"MOSFETs with virtually identical doping profiles and DC behaviour exhibit significantly larger stochastic threshold voltage fluctuations when the channel is implanted using decaborane (B/sub 10/H/sub 14/) as compared to those with conventional boron implanted channels. This paper presents a unique experimental confirmation of the contribution of ion implantation statistics to V/sub T/ fluctuations.","PeriodicalId":268624,"journal":{"name":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Impact of ion implantation statistics on V/sub T/ fluctuations in MOSFETs: comparison between decaborane and boron channel implants\",\"authors\":\"H. Tuinhout, F. Widdershoven, P. Stolk, J. Schmitz, B. Dirks, K. van der Tak, P. Bancken, J. Politiek\",\"doi\":\"10.1109/VLSIT.2000.852799\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MOSFETs with virtually identical doping profiles and DC behaviour exhibit significantly larger stochastic threshold voltage fluctuations when the channel is implanted using decaborane (B/sub 10/H/sub 14/) as compared to those with conventional boron implanted channels. This paper presents a unique experimental confirmation of the contribution of ion implantation statistics to V/sub T/ fluctuations.\",\"PeriodicalId\":268624,\"journal\":{\"name\":\"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)\",\"volume\":\"87 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2000.852799\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2000.852799","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

当使用十硼烷(B/sub - 10/H/sub - 14/)注入通道时，具有几乎相同掺杂谱和直流行为的mosfet表现出比传统硼注入通道更大的随机阈值电压波动。本文给出了离子注入统计对V/sub T/波动的贡献的独特实验证实。

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Impact of ion implantation statistics on V/sub T/ fluctuations in MOSFETs: comparison between decaborane and boron channel implants

MOSFETs with virtually identical doping profiles and DC behaviour exhibit significantly larger stochastic threshold voltage fluctuations when the channel is implanted using decaborane (B/sub 10/H/sub 14/) as compared to those with conventional boron implanted channels. This paper presents a unique experimental confirmation of the contribution of ion implantation statistics to V/sub T/ fluctuations.

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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