{"title":"在先进CMOS的设计/技术Co优化(DTCO)中考虑可变性","authors":"A. Asenov","doi":"10.1109/ETS.2014.6847791","DOIUrl":null,"url":null,"abstract":"Summary form only given. This paper describes the fully automated GSS tool flow, which bridges the gap between Technology Computer Aided Design (TCAD) at the transistor level, and circuit simulations and verification. The purpose of the tool flow is twofold: (i) to allow rapid simulation-based Design-Technology Co-Optimisation (DTCO) and (ii) to allow generation of accurate compact models for Preliminary Design Kit (PDK) development at the early stages of new technology development. The aim is to capture accurately process, statistical and time dependent variability in the DTCO and early PDKs. The operation of the automated tool flow is exemplified in the comprehensive PDK compact model development for a 14 nm SOI FinFET process, and the corresponding transistor / SRAM cell co-optimisation.","PeriodicalId":145416,"journal":{"name":"2014 19th IEEE European Test Symposium (ETS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Factoring variability in the Design/Technology Co Optimisation (DTCO) in advanced CMOS\",\"authors\":\"A. Asenov\",\"doi\":\"10.1109/ETS.2014.6847791\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. This paper describes the fully automated GSS tool flow, which bridges the gap between Technology Computer Aided Design (TCAD) at the transistor level, and circuit simulations and verification. The purpose of the tool flow is twofold: (i) to allow rapid simulation-based Design-Technology Co-Optimisation (DTCO) and (ii) to allow generation of accurate compact models for Preliminary Design Kit (PDK) development at the early stages of new technology development. The aim is to capture accurately process, statistical and time dependent variability in the DTCO and early PDKs. The operation of the automated tool flow is exemplified in the comprehensive PDK compact model development for a 14 nm SOI FinFET process, and the corresponding transistor / SRAM cell co-optimisation.\",\"PeriodicalId\":145416,\"journal\":{\"name\":\"2014 19th IEEE European Test Symposium (ETS)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 19th IEEE European Test Symposium (ETS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ETS.2014.6847791\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 19th IEEE European Test Symposium (ETS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ETS.2014.6847791","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Factoring variability in the Design/Technology Co Optimisation (DTCO) in advanced CMOS
Summary form only given. This paper describes the fully automated GSS tool flow, which bridges the gap between Technology Computer Aided Design (TCAD) at the transistor level, and circuit simulations and verification. The purpose of the tool flow is twofold: (i) to allow rapid simulation-based Design-Technology Co-Optimisation (DTCO) and (ii) to allow generation of accurate compact models for Preliminary Design Kit (PDK) development at the early stages of new technology development. The aim is to capture accurately process, statistical and time dependent variability in the DTCO and early PDKs. The operation of the automated tool flow is exemplified in the comprehensive PDK compact model development for a 14 nm SOI FinFET process, and the corresponding transistor / SRAM cell co-optimisation.