Z. Pei, J. Shi, Y. Hsu, F. Yuan, C. Liang, C. Liu, T. Pan, S. Lu, W. Hsieh, M. Tsai
{"title":"具有高速(BW=3 GHz)和极高雪崩响应度的可积SiGe光电晶体管","authors":"Z. Pei, J. Shi, Y. Hsu, F. Yuan, C. Liang, C. Liu, T. Pan, S. Lu, W. Hsieh, M. Tsai","doi":"10.1109/ISDRS.2003.1271975","DOIUrl":null,"url":null,"abstract":"In this paper, we discuss about the SiGe phototransistors (HPT) with SiGe/Si multiple quantum well (MQW) absorption layers and integratable SiGe phototransistor with high speed (BW=3 GHz) and extremely-high avalanche responsivity have been demonstrated. The properly designed non-ideal (nkT) base current can increase the speed of HPT, and have an avalanche bias with extremely high gain. The bandwidth of 3 GHz at normal bias is obtained with transistor's f/sub T/ of /spl sim/ 70 GHz. The integrated photoreceiver using commercial SiGe/Si HBT foundry is feasible.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Integratable SiGe phototransistor with high speed (BW=3 GHz) and extremely-high avalanche responsivity\",\"authors\":\"Z. Pei, J. Shi, Y. Hsu, F. Yuan, C. Liang, C. Liu, T. Pan, S. Lu, W. Hsieh, M. Tsai\",\"doi\":\"10.1109/ISDRS.2003.1271975\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we discuss about the SiGe phototransistors (HPT) with SiGe/Si multiple quantum well (MQW) absorption layers and integratable SiGe phototransistor with high speed (BW=3 GHz) and extremely-high avalanche responsivity have been demonstrated. The properly designed non-ideal (nkT) base current can increase the speed of HPT, and have an avalanche bias with extremely high gain. The bandwidth of 3 GHz at normal bias is obtained with transistor's f/sub T/ of /spl sim/ 70 GHz. The integrated photoreceiver using commercial SiGe/Si HBT foundry is feasible.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1271975\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1271975","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integratable SiGe phototransistor with high speed (BW=3 GHz) and extremely-high avalanche responsivity
In this paper, we discuss about the SiGe phototransistors (HPT) with SiGe/Si multiple quantum well (MQW) absorption layers and integratable SiGe phototransistor with high speed (BW=3 GHz) and extremely-high avalanche responsivity have been demonstrated. The properly designed non-ideal (nkT) base current can increase the speed of HPT, and have an avalanche bias with extremely high gain. The bandwidth of 3 GHz at normal bias is obtained with transistor's f/sub T/ of /spl sim/ 70 GHz. The integrated photoreceiver using commercial SiGe/Si HBT foundry is feasible.
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