{"title":"用于蜂窝CDMA/AMPS应用的高线性SiGe BiCMOS LNA和混频器","authors":"V. Aparin, E. Zeisel, P. Gazzerro","doi":"10.1109/RFIC.2002.1011939","DOIUrl":null,"url":null,"abstract":"BiCMOS LNA and mixer designed for cellular CDMA/AMPS applications are described. The circuits exhibit very high linearity thanks to low-impedance low-frequency input terminations. The LNA achieves +12.2 dBm IIP3, 16.3 dB gain and 1.5 dB NF with 7.7 mA current in the high-gain high-linearity mode. The mixer achieves +14.7 dBm IIP3, 10.9 dB conversion power gain and 6.7 dB SSB NF with 8.4 mA current in the CDMA mode.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":"{\"title\":\"Highly linear SiGe BiCMOS LNA and mixer for cellular CDMA/AMPS applications\",\"authors\":\"V. Aparin, E. Zeisel, P. Gazzerro\",\"doi\":\"10.1109/RFIC.2002.1011939\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"BiCMOS LNA and mixer designed for cellular CDMA/AMPS applications are described. The circuits exhibit very high linearity thanks to low-impedance low-frequency input terminations. The LNA achieves +12.2 dBm IIP3, 16.3 dB gain and 1.5 dB NF with 7.7 mA current in the high-gain high-linearity mode. The mixer achieves +14.7 dBm IIP3, 10.9 dB conversion power gain and 6.7 dB SSB NF with 8.4 mA current in the CDMA mode.\",\"PeriodicalId\":299621,\"journal\":{\"name\":\"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"27\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2002.1011939\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2002.1011939","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27
摘要
描述了用于蜂窝CDMA/AMPS应用的BiCMOS LNA和混频器。由于采用了低阻抗低频输入终端,该电路具有非常高的线性度。该LNA在高增益高线性模式下实现+12.2 dBm IIP3, 16.3 dB增益和1.5 dB NF,电流为7.7 mA。该混频器在CDMA模式下实现+14.7 dBm IIP3, 10.9 dB转换功率增益和6.7 dB SSB NF,电流为8.4 mA。
Highly linear SiGe BiCMOS LNA and mixer for cellular CDMA/AMPS applications
BiCMOS LNA and mixer designed for cellular CDMA/AMPS applications are described. The circuits exhibit very high linearity thanks to low-impedance low-frequency input terminations. The LNA achieves +12.2 dBm IIP3, 16.3 dB gain and 1.5 dB NF with 7.7 mA current in the high-gain high-linearity mode. The mixer achieves +14.7 dBm IIP3, 10.9 dB conversion power gain and 6.7 dB SSB NF with 8.4 mA current in the CDMA mode.