{"title":"用于放大乙醇传感的TiO2-GO场效应晶体管","authors":"Teena Gakhar, A. Hazra","doi":"10.1109/IEMTRONICS51293.2020.9216457","DOIUrl":null,"url":null,"abstract":"In this work we have proposed p-TiO2-GO nanocomposite field effect transistor based ethanol sensor. p-type TiO2 nanoparticles was prepared by sol-gel method and mixed with 2 wt% aquas solution of graphene oxide (GO) and sonicated for 30 min. The nanocomposite was prepared in combination of 5 vol% p-TiO2 nanoparticles with 95 vol% GO. The morphological and structural characterizations of developed nancomposite were carried out with field emission scanning electron microscopy (FESEM) and Raman spectroscopy techniques, respectively. The p-TiO2-GO field effect transistor (FET) sensor showed a response magnitude of 6% in terminal structure when VGS=0 and 41% as in three terminal structure when VGS=0.65 V in the exposure of 100 ppm ethanol at 100°C. The p-TiO2-GO FET showed maximum ~7 times amplification in sensitivity due to application of positive gate voltage.","PeriodicalId":269697,"journal":{"name":"2020 IEEE International IOT, Electronics and Mechatronics Conference (IEMTRONICS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"TiO2-GO Field Effect Transistors for Amplified Ethanol Sensing\",\"authors\":\"Teena Gakhar, A. Hazra\",\"doi\":\"10.1109/IEMTRONICS51293.2020.9216457\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we have proposed p-TiO2-GO nanocomposite field effect transistor based ethanol sensor. p-type TiO2 nanoparticles was prepared by sol-gel method and mixed with 2 wt% aquas solution of graphene oxide (GO) and sonicated for 30 min. The nanocomposite was prepared in combination of 5 vol% p-TiO2 nanoparticles with 95 vol% GO. The morphological and structural characterizations of developed nancomposite were carried out with field emission scanning electron microscopy (FESEM) and Raman spectroscopy techniques, respectively. The p-TiO2-GO field effect transistor (FET) sensor showed a response magnitude of 6% in terminal structure when VGS=0 and 41% as in three terminal structure when VGS=0.65 V in the exposure of 100 ppm ethanol at 100°C. The p-TiO2-GO FET showed maximum ~7 times amplification in sensitivity due to application of positive gate voltage.\",\"PeriodicalId\":269697,\"journal\":{\"name\":\"2020 IEEE International IOT, Electronics and Mechatronics Conference (IEMTRONICS)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International IOT, Electronics and Mechatronics Conference (IEMTRONICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEMTRONICS51293.2020.9216457\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International IOT, Electronics and Mechatronics Conference (IEMTRONICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMTRONICS51293.2020.9216457","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
TiO2-GO Field Effect Transistors for Amplified Ethanol Sensing
In this work we have proposed p-TiO2-GO nanocomposite field effect transistor based ethanol sensor. p-type TiO2 nanoparticles was prepared by sol-gel method and mixed with 2 wt% aquas solution of graphene oxide (GO) and sonicated for 30 min. The nanocomposite was prepared in combination of 5 vol% p-TiO2 nanoparticles with 95 vol% GO. The morphological and structural characterizations of developed nancomposite were carried out with field emission scanning electron microscopy (FESEM) and Raman spectroscopy techniques, respectively. The p-TiO2-GO field effect transistor (FET) sensor showed a response magnitude of 6% in terminal structure when VGS=0 and 41% as in three terminal structure when VGS=0.65 V in the exposure of 100 ppm ethanol at 100°C. The p-TiO2-GO FET showed maximum ~7 times amplification in sensitivity due to application of positive gate voltage.