{"title":"近阈值和亚阈值adc的比较器速度增强技术","authors":"Bojun Hu, Sanfeng Zhang, Xiong Zhou, Zehao Li, Xiangxin Pan, Zhaoming Ding, Qiang Li","doi":"10.1109/icecs53924.2021.9665467","DOIUrl":null,"url":null,"abstract":"This paper presents a comparator speed enhancement technique for successive approximation register (SAR) analog-to-digital converter (ADC) under near- and sub-threshold supply voltages. The proposed delayed cross-coupling comparator effectively improves the speed of the comparator while maintaining a good noise performance. This work has been proved by a 350mV 8bit 12MS/s SAR ADC designed in a 65nm CMOS technology. The post-layout simulation shows that the ADC achieves SNDR of 48.83dB and SFDR of 63.72dB. The overall power consumption is $6.71\\mu \\mathrm{W}$, resulting in a figure-of-merit (FoM) of 2.47 fJ/convertion-step. The simulation results present that the proposed comparator speed enhancement technique significantly improves the sampling rate of the ADC under near- and sub-threshold supply voltages.","PeriodicalId":448558,"journal":{"name":"2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Comparator Speed Enhancement Technique for Near- and Sub-Threshold ADCs\",\"authors\":\"Bojun Hu, Sanfeng Zhang, Xiong Zhou, Zehao Li, Xiangxin Pan, Zhaoming Ding, Qiang Li\",\"doi\":\"10.1109/icecs53924.2021.9665467\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a comparator speed enhancement technique for successive approximation register (SAR) analog-to-digital converter (ADC) under near- and sub-threshold supply voltages. The proposed delayed cross-coupling comparator effectively improves the speed of the comparator while maintaining a good noise performance. This work has been proved by a 350mV 8bit 12MS/s SAR ADC designed in a 65nm CMOS technology. The post-layout simulation shows that the ADC achieves SNDR of 48.83dB and SFDR of 63.72dB. The overall power consumption is $6.71\\\\mu \\\\mathrm{W}$, resulting in a figure-of-merit (FoM) of 2.47 fJ/convertion-step. The simulation results present that the proposed comparator speed enhancement technique significantly improves the sampling rate of the ADC under near- and sub-threshold supply voltages.\",\"PeriodicalId\":448558,\"journal\":{\"name\":\"2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-11-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/icecs53924.2021.9665467\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icecs53924.2021.9665467","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
提出了一种用于近阈值和亚阈值电压下逐次逼近寄存器(SAR)模数转换器(ADC)的比较器速度增强技术。所提出的延迟交叉耦合比较器在保持良好噪声性能的同时,有效地提高了比较器的速度。该工作已通过采用65nm CMOS技术设计的350mV 8bit 12MS/s SAR ADC得到验证。布局后仿真结果表明,该ADC的SNDR为48.83dB, SFDR为63.72dB。总功耗为$6.71\mu \mathrm{W}$,从而产生2.47 fJ/转换步的性能值(FoM)。仿真结果表明,所提出的比较器速度增强技术显著提高了ADC在近阈值和亚阈值电压下的采样率。
A Comparator Speed Enhancement Technique for Near- and Sub-Threshold ADCs
This paper presents a comparator speed enhancement technique for successive approximation register (SAR) analog-to-digital converter (ADC) under near- and sub-threshold supply voltages. The proposed delayed cross-coupling comparator effectively improves the speed of the comparator while maintaining a good noise performance. This work has been proved by a 350mV 8bit 12MS/s SAR ADC designed in a 65nm CMOS technology. The post-layout simulation shows that the ADC achieves SNDR of 48.83dB and SFDR of 63.72dB. The overall power consumption is $6.71\mu \mathrm{W}$, resulting in a figure-of-merit (FoM) of 2.47 fJ/convertion-step. The simulation results present that the proposed comparator speed enhancement technique significantly improves the sampling rate of the ADC under near- and sub-threshold supply voltages.