纳米线无结ISFET的紧凑解析模型

2021 28th International Conference on Mixed Design of Integrated Circuits and System Pub Date : 2021-06-24 DOI:10.23919/MIXDES52406.2021.9497641

A. Yesayan, J. Sallese

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引用次数: 1

摘要

在这项工作中，我们提出了一个简单的紧凑模型，用于无结连接敏感fet (JL ISFET)在耗尽中工作。讨论了纳米线物理和几何参数对灵敏度的依赖性，作为器件优化的指导。利用COMSOL多物理场仿真对模型进行了验证。

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Compact Analytical Model of Nanowire Junctionless ISFET

In this work, we present a simple compact model for junctionless ion-sensitive FETs (JL ISFET) operating in depletion. The sensitivity dependence on nanowire physical and geometrical parameters are discussed as guidelines for the device optimization. The model validation with COMSOL Multiphysics simulations is presented.

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2021 28th International Conference on Mixed Design of Integrated Circuits and System

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