位移电流对电解门控石墨烯场效应管电流-电压特性的影响

2014 International Conference on Electronics, Information and Communications (ICEIC) Pub Date : 1900-01-01 DOI:10.1109/ELINFOCOM.2014.6914429

Jun-Mo Park, Jong-Ho Lee

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引用次数: 1

摘要

我们研究了电解质门控石墨烯场效应晶体管(gfet)的漏极电流-栅极电压(ID-VG)和id -时间(t)特性。在扫频速度快的ID-VG曲线上出现的逆时针磁滞是由位移电流引起的，从而限制了电解门控gfet的工作速度。通过分析具有不同栅极和源极/漏极重叠面积的电解门控gfet的ID-t特性，论证了寄生电容(Cpara)对位移电流的影响。本文还报道了具有金属栅极的gfet的特性，以验证Cpara的效果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of displacement current on current-voltage characteristics in electrolyte-gated graphene FETs

We investigated drain current-gate voltage (I_D-V_G) and I_D-time (t) characteristics in electrolyte-gated graphene field effect transistors (GFETs). The counterclockwise hysteresis appearing in I_D-V_G curves with fast sweeping rate is caused by the displacement current, and thus limits the operating speed of electrolyte-gated GFETs. By analyzing the I_D-t characteristics of electrolyte-gated GFETs having different areas of the overlap between the gate and the source/drain electrodes, the effect of the parasitic capacitance (C_para) on the displacement current is demonstrated. The characteristics of GFETs with metal gate are also reported to verify the effect of the C_para.

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2014 International Conference on Electronics, Information and Communications (ICEIC)

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