半导体制造中静电放电场的测量与分析

T. Maloney
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引用次数: 4

摘要

破坏性带电器件模型静电放电事件可能发生在半导体制造中,并且应该从电偶极子坍缩产生的辐射中检测到。利用一种新的仪器(CDM事件模拟器或CDMES)可以很容易地产生可解析描述的CDM辐射场脉冲,该仪器可以随意产生偶极子坍缩。同轴单极电磁场天线的传递函数给出了天线近场信号,实验结果与理论比较吻合。这些和其他用于CDM ESD监测和过程控制的仪器在一项新发布的专利中进行了描述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The Case for Measurement and Analysis of ESD Fields in Semiconductor Manufacturing
A destructive Charged Device Model electrostatic discharge event can happen in semiconductor manufacturing and should be detectable from radiation that results from collapse of an electric dipole. The analytically describable radiation field pulse of CDM can be readily produced with a new instrument (CDM Event Simulator or CDMES) that creates dipole collapse at will. A coaxial monopole E-field antenna's transfer function gives the antenna signal in near-field, and experiments compare well with theory. These and other instruments for CDM ESD monitoring and process control are described in a newly-issued patent, reviewed here.
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