{"title":"新型双异质结构激光器","authors":"A. Springthorpe, M. Rider","doi":"10.1109/IEDM.1977.189323","DOIUrl":null,"url":null,"abstract":"In this paper we describe the preparation and characterization of two novel kinds of double-heterostructure (DH) lasers which combine both the Burrus LED and oxide-stripe laser technologies. Laser emission from one of the devices (Type I) emerges from a pair of holes which are etched through the substrate to expose the n-GaAlAs first confining layer. The n-GaAlAs/air interface forms the mirrors of the resonant optical cavity and the laser emission is perpendicular to the gain region, (active layer of the DH). In the second device (Type II) the resonant cavity is formed between the n-GaAlAs/air interface and a","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Novel double-heterostructure lasers\",\"authors\":\"A. Springthorpe, M. Rider\",\"doi\":\"10.1109/IEDM.1977.189323\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we describe the preparation and characterization of two novel kinds of double-heterostructure (DH) lasers which combine both the Burrus LED and oxide-stripe laser technologies. Laser emission from one of the devices (Type I) emerges from a pair of holes which are etched through the substrate to expose the n-GaAlAs first confining layer. The n-GaAlAs/air interface forms the mirrors of the resonant optical cavity and the laser emission is perpendicular to the gain region, (active layer of the DH). In the second device (Type II) the resonant cavity is formed between the n-GaAlAs/air interface and a\",\"PeriodicalId\":218912,\"journal\":{\"name\":\"1977 International Electron Devices Meeting\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1977.189323\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189323","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper we describe the preparation and characterization of two novel kinds of double-heterostructure (DH) lasers which combine both the Burrus LED and oxide-stripe laser technologies. Laser emission from one of the devices (Type I) emerges from a pair of holes which are etched through the substrate to expose the n-GaAlAs first confining layer. The n-GaAlAs/air interface forms the mirrors of the resonant optical cavity and the laser emission is perpendicular to the gain region, (active layer of the DH). In the second device (Type II) the resonant cavity is formed between the n-GaAlAs/air interface and a
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