{"title":"在800伏开关中用作控制元件的高效率功率MOSFET","authors":"R. Severns, A. Cogan, T. Fortier","doi":"10.1109/APEC.1986.7073308","DOIUrl":null,"url":null,"abstract":"The advantages of a new generation of lowvoltage, dense geometry (1.6 million cells /in.2) power MOSFETs for switching applications is discussed. These devices provide a factor of two lower on-resistance per unit area with a substantial reduction in capacitance. An emitterswitched high-voltage BJT is used as a design example. The discussion on emitter open switching will bring to light several new aspects of this type of BJT operation.","PeriodicalId":302790,"journal":{"name":"1986 IEEE Applied Power Electronics Conference and Exposition","volume":"325 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A high-efficiency power MOSFET used as the control element in an 800-volt switch\",\"authors\":\"R. Severns, A. Cogan, T. Fortier\",\"doi\":\"10.1109/APEC.1986.7073308\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The advantages of a new generation of lowvoltage, dense geometry (1.6 million cells /in.2) power MOSFETs for switching applications is discussed. These devices provide a factor of two lower on-resistance per unit area with a substantial reduction in capacitance. An emitterswitched high-voltage BJT is used as a design example. The discussion on emitter open switching will bring to light several new aspects of this type of BJT operation.\",\"PeriodicalId\":302790,\"journal\":{\"name\":\"1986 IEEE Applied Power Electronics Conference and Exposition\",\"volume\":\"325 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 IEEE Applied Power Electronics Conference and Exposition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEC.1986.7073308\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE Applied Power Electronics Conference and Exposition","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.1986.7073308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high-efficiency power MOSFET used as the control element in an 800-volt switch
The advantages of a new generation of lowvoltage, dense geometry (1.6 million cells /in.2) power MOSFETs for switching applications is discussed. These devices provide a factor of two lower on-resistance per unit area with a substantial reduction in capacitance. An emitterswitched high-voltage BJT is used as a design example. The discussion on emitter open switching will bring to light several new aspects of this type of BJT operation.
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