一种新的双极提取工具，用于广泛的设备行为

Proceedings of the 1991 International Conference on Microelectronic Test Structures Pub Date : 1990-03-18 DOI:10.1109/ICMTS.1990.161741

E. Mazaleyrat, D. Céli, A. Juge, B. Cialdella

{"title":"一种新的双极提取工具，用于广泛的设备行为","authors":"E. Mazaleyrat, D. Céli, A. Juge, B. Cialdella","doi":"10.1109/ICMTS.1990.161741","DOIUrl":null,"url":null,"abstract":"The recent development of BiCMOS and advanced bipolar and merged bipolar CMOS and DMOS technologies requires the enhancement of both models and parameter extraction strategies for the bipolar device. In order to take into account special behavior such as the base push-out effect or the nonideal base current, new features have been added to the classical SPICE BJT (bipolar junction transistor) model. A flexible software tool has been developed to allow the use of different parameter extraction schemes suitable for a wide range of device behaviors. Experimental validations have been performed in DC analysis. The RMS (root mean square) error on current gain is less than 2%.<<ETX>>","PeriodicalId":417292,"journal":{"name":"Proceedings of the 1991 International Conference on Microelectronic Test Structures","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A new bipolar extraction tool for wide range of device behaviours\",\"authors\":\"E. Mazaleyrat, D. Céli, A. Juge, B. Cialdella\",\"doi\":\"10.1109/ICMTS.1990.161741\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The recent development of BiCMOS and advanced bipolar and merged bipolar CMOS and DMOS technologies requires the enhancement of both models and parameter extraction strategies for the bipolar device. In order to take into account special behavior such as the base push-out effect or the nonideal base current, new features have been added to the classical SPICE BJT (bipolar junction transistor) model. A flexible software tool has been developed to allow the use of different parameter extraction schemes suitable for a wide range of device behaviors. Experimental validations have been performed in DC analysis. The RMS (root mean square) error on current gain is less than 2%.<<ETX>>\",\"PeriodicalId\":417292,\"journal\":{\"name\":\"Proceedings of the 1991 International Conference on Microelectronic Test Structures\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-03-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1991 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1990.161741\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1991 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1990.161741","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

近年来，随着BiCMOS和先进双极及双极CMOS和DMOS技术的发展，双极器件的模型和参数提取策略都得到了改进。为了考虑特殊的行为，如基极推挽效应或非理想基极电流，在经典的SPICE BJT(双极结晶体管)模型中添加了新的特性。一个灵活的软件工具已经开发，以允许使用不同的参数提取方案适用于广泛的设备行为。在直流分析中进行了实验验证。电流增益的均方根误差小于2%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A new bipolar extraction tool for wide range of device behaviours

The recent development of BiCMOS and advanced bipolar and merged bipolar CMOS and DMOS technologies requires the enhancement of both models and parameter extraction strategies for the bipolar device. In order to take into account special behavior such as the base push-out effect or the nonideal base current, new features have been added to the classical SPICE BJT (bipolar junction transistor) model. A flexible software tool has been developed to allow the use of different parameter extraction schemes suitable for a wide range of device behaviors. Experimental validations have been performed in DC analysis. The RMS (root mean square) error on current gain is less than 2%.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 1991 International Conference on Microelectronic Test Structures

自引率

0.00%

发文量