ku波段CMOS低噪声放大器

2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI:10.1109/RFIT.2005.1598906

K. Deng, Ming-Da Tsai, Chin-Shen Lin, Kun-You Lin, Huei Wang, S.H. Wang, W. Lien, G.J. Chem

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引用次数: 24

摘要

介绍了一种ku波段单片低噪声放大器。该LNA采用商用0.18-/spl mu/m CMOS技术制造，采用两级共源设计，而不是级联编码配置，具有较低的噪声性能。该CMOS LNA在14至15 GHz范围内的增益优于10 dB, NF优于3.2 dB。测量输出P/sub 1dB/约为5.2 dBm，输入IP3为1.6 dBm。芯片尺寸包括所有测试垫为0.88 /spl倍/ 0.77毫米/sup 2/。

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A Ku-band CMOS low-noise amplifier

A Ku-band monolithic low-noise amplifier is presented in this paper. This LNA fabricated in commercial 0.18-/spl mu/m CMOS technology is a two-stage common-source design instead of cascode configuration for lower noise performance. This CMOS LNA demonstrates a gain of better than 10 dB and a NF of better than 3.2 dB from 14 to 15 GHz. The measured output P/sub 1dB/ is about 5.2 dBm and input IP3 is 1.6 dBm. The chip size including all testing pads is 0.88 /spl times/ 0.77 mm/sup 2/.

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2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks

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