Thermal Characterization of Power Gallium Nitride Transistor

This paper presents a methodology for thermal characterization of GaN power module, involving measurement of the thermal transient response and analysis of its structure function. We developed a simulation thermal model of the measured GaN transistor using Simcenter Flotherm software and calibrated it using transient thermal measurement response of T3Ster. To achieve accurate calibration, we employed the SHERPA algorithm, a systematic hybrid exploration that is robust, progressive, and adaptive. The calibrated structure function of the power GaN transistor was found to match the measured structure function with an accuracy of 99.77% and a calibration extent of 5.0 K/W.