热老化功率IGBT的高斯过程回归剩余使用寿命预测

Adla Ismail, L. Saidi, M. Sayadi, Mohamed Benbouzid
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引用次数: 8

摘要

电力电子变流器如逆变器和整流器是可再生能源系统的重要组成部分。通常情况下,电源变流器的故障率很高,导致电力系统关闭。为了预测功率绝缘栅双极晶体管(igbt)器件的老化,本文提出了一种基于高斯过程回归技术的功率绝缘栅双极晶体管(igbt)器件剩余使用寿命估计算法。通过在栅极处使用直流直流在热超应力下设置的实际器件加速老化数据库,也说明了所提出的预测方法的优点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Gaussian Process Regression Remaining Useful Lifetime Prediction of Thermally Aged Power IGBT
Power electronic converters such as inverters and rectifiers are crucial parts of renewable energy systems. Usually, the power converters are subjected to a high failure frequency rate and lead to power system shut down. In an effort to predict power insulated gate bipolar transistor (IGBTs) device aging, this paper proposes a remaining useful life estimation algorithm for degraded power IGBTs, which are exposed to high amplitude of thermal overstress, through the Gaussian Process regression technique. The benefits of the proposed prognostic method are also illustrated with real device accelerated aging database set under thermal overstress utilizing a DC at the gate.
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