基于石墨烯纳米带隧道场效应晶体管的生物传感器:器件特性

G. Nayana, P. Vimala, V. Anandi
{"title":"基于石墨烯纳米带隧道场效应晶体管的生物传感器:器件特性","authors":"G. Nayana, P. Vimala, V. Anandi","doi":"10.1109/PhDEDITS56681.2022.9955296","DOIUrl":null,"url":null,"abstract":"Biosensors has created a revolution in the area of research post pandemic situation. There are many ways to detect bio-molecules. The device that has gained huge popularity to detect the bio-molecules is the Field-Effect Transistor. It has higher ability to detect and its sensitivity is better with reduced device size and yields quick reactive and response time. But MOSFETs suffer from limitation of subthreshold swing of 60mV/decade. New device architecture with new device material is the need of the hour. Graphene Nanoribbon Tunnel Field Effect Transistor (GNR-TFET) device structure is presented and simulated for capturing device characteristics for bio-molecular application.","PeriodicalId":373652,"journal":{"name":"2022 IEEE 4th PhD Colloquium on Emerging Domain Innovation and Technology for Society (PhD EDITS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Graphene Nano-ribbon Tunnel Field Effect Transistor based Bio-Sensors:Device Characteristics\",\"authors\":\"G. Nayana, P. Vimala, V. Anandi\",\"doi\":\"10.1109/PhDEDITS56681.2022.9955296\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Biosensors has created a revolution in the area of research post pandemic situation. There are many ways to detect bio-molecules. The device that has gained huge popularity to detect the bio-molecules is the Field-Effect Transistor. It has higher ability to detect and its sensitivity is better with reduced device size and yields quick reactive and response time. But MOSFETs suffer from limitation of subthreshold swing of 60mV/decade. New device architecture with new device material is the need of the hour. Graphene Nanoribbon Tunnel Field Effect Transistor (GNR-TFET) device structure is presented and simulated for capturing device characteristics for bio-molecular application.\",\"PeriodicalId\":373652,\"journal\":{\"name\":\"2022 IEEE 4th PhD Colloquium on Emerging Domain Innovation and Technology for Society (PhD EDITS)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE 4th PhD Colloquium on Emerging Domain Innovation and Technology for Society (PhD EDITS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PhDEDITS56681.2022.9955296\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 4th PhD Colloquium on Emerging Domain Innovation and Technology for Society (PhD EDITS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PhDEDITS56681.2022.9955296","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

生物传感器在大流行后的研究领域掀起了一场革命。检测生物分子的方法有很多。在检测生物分子方面获得巨大普及的装置是场效应晶体管。它具有更高的检测能力和更好的灵敏度,减小了器件尺寸,产生快速的反应和响应时间。但mosfet受到60mV/ 10年亚阈值摆幅的限制。新的设备结构和新的设备材料是当前的需要。提出并模拟了石墨烯纳米带隧道场效应晶体管(GNR-TFET)器件结构,以捕捉生物分子应用器件的特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Graphene Nano-ribbon Tunnel Field Effect Transistor based Bio-Sensors:Device Characteristics
Biosensors has created a revolution in the area of research post pandemic situation. There are many ways to detect bio-molecules. The device that has gained huge popularity to detect the bio-molecules is the Field-Effect Transistor. It has higher ability to detect and its sensitivity is better with reduced device size and yields quick reactive and response time. But MOSFETs suffer from limitation of subthreshold swing of 60mV/decade. New device architecture with new device material is the need of the hour. Graphene Nanoribbon Tunnel Field Effect Transistor (GNR-TFET) device structure is presented and simulated for capturing device characteristics for bio-molecular application.
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