助听器语音处理器超低功耗滤波器组

2012 IEEE Subthreshold Microelectronics Conference (SubVT) Pub Date : 2012-10-01 DOI:10.1109/SUBVT.2012.6404314

Kwen-Siong Chong, M. Barangi, Jaeyoung Kim, J. Chang, P. Mazumder

{"title":"助听器语音处理器超低功耗滤波器组","authors":"Kwen-Siong Chong, M. Barangi, Jaeyoung Kim, J. Chang, P. Mazumder","doi":"10.1109/SUBVT.2012.6404314","DOIUrl":null,"url":null,"abstract":"An ultra-low power sub-threshold Finite Impulse Response (FIR) filter bank for hearing aid applications is demonstrated in 65nm CMOS technology. The system has a 2kb Static Random Access Memory (SRAM) interface optimized for sub-threshold operation. The system operates at 0.3V sub-threshold regime and consumes 10.4 μW at 0.96MHz clock frequency which corresponds to merely 0.6nJ per FIR operation.","PeriodicalId":383826,"journal":{"name":"2012 IEEE Subthreshold Microelectronics Conference (SubVT)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Ultra low-power filter bank for hearing aid speech processor\",\"authors\":\"Kwen-Siong Chong, M. Barangi, Jaeyoung Kim, J. Chang, P. Mazumder\",\"doi\":\"10.1109/SUBVT.2012.6404314\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An ultra-low power sub-threshold Finite Impulse Response (FIR) filter bank for hearing aid applications is demonstrated in 65nm CMOS technology. The system has a 2kb Static Random Access Memory (SRAM) interface optimized for sub-threshold operation. The system operates at 0.3V sub-threshold regime and consumes 10.4 μW at 0.96MHz clock frequency which corresponds to merely 0.6nJ per FIR operation.\",\"PeriodicalId\":383826,\"journal\":{\"name\":\"2012 IEEE Subthreshold Microelectronics Conference (SubVT)\",\"volume\":\"88 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Subthreshold Microelectronics Conference (SubVT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SUBVT.2012.6404314\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Subthreshold Microelectronics Conference (SubVT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SUBVT.2012.6404314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

一种用于助听器应用的超低功耗亚阈值有限脉冲响应(FIR)滤波器组采用65nm CMOS技术进行了演示。该系统具有一个2kb静态随机存取存储器(SRAM)接口，针对亚阈值操作进行了优化。系统工作在0.3V的亚阈值状态下，在0.96MHz时钟频率下消耗10.4 μW，对应于每次FIR操作仅0.6nJ。

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Ultra low-power filter bank for hearing aid speech processor

An ultra-low power sub-threshold Finite Impulse Response (FIR) filter bank for hearing aid applications is demonstrated in 65nm CMOS technology. The system has a 2kb Static Random Access Memory (SRAM) interface optimized for sub-threshold operation. The system operates at 0.3V sub-threshold regime and consumes 10.4 μW at 0.96MHz clock frequency which corresponds to merely 0.6nJ per FIR operation.

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2012 IEEE Subthreshold Microelectronics Conference (SubVT)

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