Fabrication of graphene field-effect transistors by simple stripping from CVD-grown layers

We develop a simple technique to fabricate graphene field-effect-transistor (FET) devices. Our technique is stripping graphene by scotch tape from the chemical vapor deposition (CVD)-grown layer, except the gap region between the source and drain electrode. The current-voltage (I–V) characteristic of a graphene FET before stripping shows a large zero-bias conductance of 6.5 mS and no gate operation. After stripping, the zero gate bias conductance of the device is reduced to 23 µS and a clear gate operation is observed. The change of FET characteristics before and after stripping is due to the formation of a urn size graphene flake. There is large potential that this one-step stripping technique can be extended to a more controllable method to fabricate graphene FET devices.