J. Lasri, A. Bilenca, G. Eisenstein, D. Ritter, M. Orenstein, V. Sidorov, S. Cohen, P. Goldgeier
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A two heterojunction bipolar photo-transistor configuration for millimeter wave generation and modulation
We describe an advanced millimeter wave source employing two InP-InGaAs heterojunction bipolar photo-transistors. One, functioning as a 30 GHz self oscillator, was optically injection locked. The second acts as an optoelectronic mixer/modulator for analog and digital signals.