用详细的数值模型解释薄膜太阳能电池的电容电压特性

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI:10.1109/PVSC.1996.564275

J. Gray

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引用次数: 4

摘要

本文的目的是提出一种数值模拟工具，可以用作解释薄膜太阳能电池的C-V特性的辅助工具。这里给出的示例模拟是针对ZnO/CdS/CuInSe/sub 2/太阳能电池的，但模拟工具可以用于各种太阳能电池，包括CdTe。给出了模拟半导体器件小信号行为的模型方程。将这些小信号方程纳入详细的数值模型的样本模拟进行了解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Interpretation of capacitance-voltage characteristics in thin-film solar cells using a detailed numerical model

The objective of this paper is to present a numerical simulation tool that can be used as an aid in the interpretation of the C-V characteristics of thin-film solar cells. The example simulations presented here are for a ZnO/CdS/CuInSe/sub 2/ solar cell, but the simulation tool can be used for a variety of solar cells, including CdTe. Model equations for the simulation of the small-signal behavior of semiconductor devices are presented. Sample simulations incorporating these small-signal equations into a detailed numerical model are interpreted.

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Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996

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