P. Kopyt, B. Salski, J. Cuper, P. Zagrajek, J. Bar, D. Obrebski
{"title":"基于GaAs HEMT的宽带准光学亚太赫兹探测器","authors":"P. Kopyt, B. Salski, J. Cuper, P. Zagrajek, J. Bar, D. Obrebski","doi":"10.23919/MIKON.2018.8405164","DOIUrl":null,"url":null,"abstract":"This paper presents design and testing of a broadband quasi-optical sub-THz detector based on a GaAs/AlGaAs HEMT transistor monolithically integrated with an antenna and mounted on a high-resistivity silicon hyper- spherical lens. Comparative measurements of the fabricated device have been performed to reveal that the responsivity of the resulting detector in the frequency range of 100–200 GHz is on the order of 150 V/W while in the range of 200–300 GHz it falls to ca. 30 V/W.","PeriodicalId":143491,"journal":{"name":"2018 22nd International Microwave and Radar Conference (MIKON)","volume":"259 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Broadband quasi-optical sub-THz detector based on GaAs HEMT\",\"authors\":\"P. Kopyt, B. Salski, J. Cuper, P. Zagrajek, J. Bar, D. Obrebski\",\"doi\":\"10.23919/MIKON.2018.8405164\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents design and testing of a broadband quasi-optical sub-THz detector based on a GaAs/AlGaAs HEMT transistor monolithically integrated with an antenna and mounted on a high-resistivity silicon hyper- spherical lens. Comparative measurements of the fabricated device have been performed to reveal that the responsivity of the resulting detector in the frequency range of 100–200 GHz is on the order of 150 V/W while in the range of 200–300 GHz it falls to ca. 30 V/W.\",\"PeriodicalId\":143491,\"journal\":{\"name\":\"2018 22nd International Microwave and Radar Conference (MIKON)\",\"volume\":\"259 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 22nd International Microwave and Radar Conference (MIKON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/MIKON.2018.8405164\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 22nd International Microwave and Radar Conference (MIKON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MIKON.2018.8405164","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Broadband quasi-optical sub-THz detector based on GaAs HEMT
This paper presents design and testing of a broadband quasi-optical sub-THz detector based on a GaAs/AlGaAs HEMT transistor monolithically integrated with an antenna and mounted on a high-resistivity silicon hyper- spherical lens. Comparative measurements of the fabricated device have been performed to reveal that the responsivity of the resulting detector in the frequency range of 100–200 GHz is on the order of 150 V/W while in the range of 200–300 GHz it falls to ca. 30 V/W.