Yuanchen Chu, Prasad Sarangapani, J. Charles, Gerhard Klimeck, T. Kubis
{"title":"半导体纳米器件的纯电子显式筛选量子输运模型","authors":"Yuanchen Chu, Prasad Sarangapani, J. Charles, Gerhard Klimeck, T. Kubis","doi":"10.1109/SISPAD.2018.8551666","DOIUrl":null,"url":null,"abstract":"State of the art quantum transport models for semi-conductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation that yield model dependent charge contributions. In any nanodevice structure, these models rely on device and physics specific input for the dielectric constants. This work exemplifies the large variability of different charge interpretation models when applied to ultrathin body transistor performance predictions. To solve this modeling challenge, an electron-only band structure model is extended to atomistic quantum transport. Performance predictions of MOSFETs and tunneling FETs confirm the generality of the new model and its independence of additional screening models.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"127 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electron-only explicit screening quantum transport model for semiconductor nanodevices\",\"authors\":\"Yuanchen Chu, Prasad Sarangapani, J. Charles, Gerhard Klimeck, T. Kubis\",\"doi\":\"10.1109/SISPAD.2018.8551666\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"State of the art quantum transport models for semi-conductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation that yield model dependent charge contributions. In any nanodevice structure, these models rely on device and physics specific input for the dielectric constants. This work exemplifies the large variability of different charge interpretation models when applied to ultrathin body transistor performance predictions. To solve this modeling challenge, an electron-only band structure model is extended to atomistic quantum transport. Performance predictions of MOSFETs and tunneling FETs confirm the generality of the new model and its independence of additional screening models.\",\"PeriodicalId\":170070,\"journal\":{\"name\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"127 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2018.8551666\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551666","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electron-only explicit screening quantum transport model for semiconductor nanodevices
State of the art quantum transport models for semi-conductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation that yield model dependent charge contributions. In any nanodevice structure, these models rely on device and physics specific input for the dielectric constants. This work exemplifies the large variability of different charge interpretation models when applied to ultrathin body transistor performance predictions. To solve this modeling challenge, an electron-only band structure model is extended to atomistic quantum transport. Performance predictions of MOSFETs and tunneling FETs confirm the generality of the new model and its independence of additional screening models.