输入调幅谐波共相放大器

2013 13th Mediterranean Microwave Symposium (MMS) Pub Date : 2013-11-14 DOI:10.1109/MMS.2013.6663082

Z. Abou-Chahine, T. Felgentreff, G. Fischer, R. Weigel

{"title":"输入调幅谐波共相放大器","authors":"Z. Abou-Chahine, T. Felgentreff, G. Fischer, R. Weigel","doi":"10.1109/MMS.2013.6663082","DOIUrl":null,"url":null,"abstract":"In this paper, an outphasing power amplifier (PA) made using 2×30W GaN HEMTs and operated in deep class-C bias is presented. The design methodology along with some practical design aspects is also considered. The paper reports a working novel operational concept of outphasing with unmatched combiner, showing a potential to deliver more than 40% drain efficiency at 10 dB Power Back Off (PBO).","PeriodicalId":361750,"journal":{"name":"2013 13th Mediterranean Microwave Symposium (MMS)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An input amplitude modulated harmonic outphasing PA\",\"authors\":\"Z. Abou-Chahine, T. Felgentreff, G. Fischer, R. Weigel\",\"doi\":\"10.1109/MMS.2013.6663082\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, an outphasing power amplifier (PA) made using 2×30W GaN HEMTs and operated in deep class-C bias is presented. The design methodology along with some practical design aspects is also considered. The paper reports a working novel operational concept of outphasing with unmatched combiner, showing a potential to deliver more than 40% drain efficiency at 10 dB Power Back Off (PBO).\",\"PeriodicalId\":361750,\"journal\":{\"name\":\"2013 13th Mediterranean Microwave Symposium (MMS)\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 13th Mediterranean Microwave Symposium (MMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MMS.2013.6663082\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 13th Mediterranean Microwave Symposium (MMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MMS.2013.6663082","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文介绍了一种用2×30W GaN hemt制成的、工作在深c类偏置下的失相功率放大器。设计方法以及一些实际的设计方面也被考虑。该论文报告了一种新颖的工作概念，即采用无与伦比的组合器进行失相，显示出在10db功率回退(PBO)下提供超过40%漏极效率的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

An input amplitude modulated harmonic outphasing PA

In this paper, an outphasing power amplifier (PA) made using 2×30W GaN HEMTs and operated in deep class-C bias is presented. The design methodology along with some practical design aspects is also considered. The paper reports a working novel operational concept of outphasing with unmatched combiner, showing a potential to deliver more than 40% drain efficiency at 10 dB Power Back Off (PBO).

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 13th Mediterranean Microwave Symposium (MMS)

自引率

0.00%

发文量