{"title":"有源相控阵天线的x波段功率放大器","authors":"I. Abolduyev, A. M. Zubkov, V. Minnebaev","doi":"10.1109/ICSC.1998.741405","DOIUrl":null,"url":null,"abstract":"An amplifier is designed with P/sub 1/ /sub dB/>2 W and gain >30 dB in the frequency band of 8.1/spl plusmn/0.25 GHz. The gain variation is less than 1 dB, with controlled phase from 0/spl deg/ to 360/spl deg/, and efficiency of more than 20%. As an active element base we use crystals of the transistors A/spl Pi/608 and A/spl Pi/603, produced by the Pulsar plant.","PeriodicalId":240115,"journal":{"name":"3rd International Conference on Satellite Communications (IEEE Cat. No.98TH8392)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"X-band power amplifier for active phased-array antennas\",\"authors\":\"I. Abolduyev, A. M. Zubkov, V. Minnebaev\",\"doi\":\"10.1109/ICSC.1998.741405\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An amplifier is designed with P/sub 1/ /sub dB/>2 W and gain >30 dB in the frequency band of 8.1/spl plusmn/0.25 GHz. The gain variation is less than 1 dB, with controlled phase from 0/spl deg/ to 360/spl deg/, and efficiency of more than 20%. As an active element base we use crystals of the transistors A/spl Pi/608 and A/spl Pi/603, produced by the Pulsar plant.\",\"PeriodicalId\":240115,\"journal\":{\"name\":\"3rd International Conference on Satellite Communications (IEEE Cat. No.98TH8392)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"3rd International Conference on Satellite Communications (IEEE Cat. No.98TH8392)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSC.1998.741405\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd International Conference on Satellite Communications (IEEE Cat. No.98TH8392)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSC.1998.741405","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
X-band power amplifier for active phased-array antennas
An amplifier is designed with P/sub 1/ /sub dB/>2 W and gain >30 dB in the frequency band of 8.1/spl plusmn/0.25 GHz. The gain variation is less than 1 dB, with controlled phase from 0/spl deg/ to 360/spl deg/, and efficiency of more than 20%. As an active element base we use crystals of the transistors A/spl Pi/608 and A/spl Pi/603, produced by the Pulsar plant.